Bound Exciton Transfer in Weakly Disordered Systems : Iii-v Alloys
نویسندگان
چکیده
Transfer mechanisms of N-bound excitons in Ga*In,_xP:N and GaAs,.xPx:N alloys are studied as a function of temperature using picosecond time resolved photoluminescence. The results, direct exciton tunneling between localized states and multiple trapping via free excitons, are different from those seen in the binary GaP:N. Thus, we demonstrate the importance of alloy disorder on the exciton dynamics.
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تاریخ انتشار 2016